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Silvaco Inc cdse zns qds
The COMSOL Multiphysics simulation output of the optical and electronic properties of the SiO 2 /MoTe 2 <t>/CdSe/ZnS</t> heterostructure. ( a – c ) The absorption spectrum of MoTe 2 , SiO 2 , and CdSe/ZnS QDs. ( d ) The multilayer geometry visualized using a COMSOL-based simulation. ( e ) Absorption, ( f ) transmission, and ( g ) reflection spectra of the complete SiO 2 /MoTe 2 /CdSe/ZnS. ( h ) Energy band diagram of the heterostructure that shows the alignment of type-I bands between the layers of MoTe 2 and CdSe/ZnS and provides the possibility of carrier confinement and separation of charges. From left to right, the energy band diagram corresponds to SiO 2 MoTe 2 /CdSe/ZnS. SiO 2 acts as the insulating substrate, MoTe 2 is the active layer, and CdSe/ZnS represents the core–shell quantum dots.
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1) Product Images from "Multiscale Design and Simulation of CdSe/ZnS/MoTe 2 Hybrid Photodetectors"

Article Title: Multiscale Design and Simulation of CdSe/ZnS/MoTe 2 Hybrid Photodetectors

Journal: Sensors (Basel, Switzerland)

doi: 10.3390/s26082516

The COMSOL Multiphysics simulation output of the optical and electronic properties of the SiO 2 /MoTe 2 /CdSe/ZnS heterostructure. ( a – c ) The absorption spectrum of MoTe 2 , SiO 2 , and CdSe/ZnS QDs. ( d ) The multilayer geometry visualized using a COMSOL-based simulation. ( e ) Absorption, ( f ) transmission, and ( g ) reflection spectra of the complete SiO 2 /MoTe 2 /CdSe/ZnS. ( h ) Energy band diagram of the heterostructure that shows the alignment of type-I bands between the layers of MoTe 2 and CdSe/ZnS and provides the possibility of carrier confinement and separation of charges. From left to right, the energy band diagram corresponds to SiO 2 MoTe 2 /CdSe/ZnS. SiO 2 acts as the insulating substrate, MoTe 2 is the active layer, and CdSe/ZnS represents the core–shell quantum dots.
Figure Legend Snippet: The COMSOL Multiphysics simulation output of the optical and electronic properties of the SiO 2 /MoTe 2 /CdSe/ZnS heterostructure. ( a – c ) The absorption spectrum of MoTe 2 , SiO 2 , and CdSe/ZnS QDs. ( d ) The multilayer geometry visualized using a COMSOL-based simulation. ( e ) Absorption, ( f ) transmission, and ( g ) reflection spectra of the complete SiO 2 /MoTe 2 /CdSe/ZnS. ( h ) Energy band diagram of the heterostructure that shows the alignment of type-I bands between the layers of MoTe 2 and CdSe/ZnS and provides the possibility of carrier confinement and separation of charges. From left to right, the energy band diagram corresponds to SiO 2 MoTe 2 /CdSe/ZnS. SiO 2 acts as the insulating substrate, MoTe 2 is the active layer, and CdSe/ZnS represents the core–shell quantum dots.

Techniques Used: Transmission Assay

Simulated electrical characteristics of MoTe 2 -based photodetectors with and without CdSe/ZnS QDs when exposed to 520 nm illumination. ( a ) The output curve of the MoTe 2 -based photodetector without QDs shows its response to dark conditions and power density from 11.3 to 171.3 mW/cm 2 at a 520 nm wavelength. ( b ) Output curves of the MoTe 2 -based photodetector with QDs under dark conditions and illumination power densities from 11.3 mW/cm 2 to 171.3 mW/cm 2 at a 520 nm wavelength. ( c ) Transfer curves of the MoTe 2 -based photodetector without QDs under dark and an illuminated power density of 171.3 mW/cm 2 at 520 nm (V d = 1 V). ( d ) Transfer curves of the MoTe 2 -based photodetector with QDs under dark and an illuminated power density of 171.3 mW/cm 2 at 520 nm (V d = 1 V).
Figure Legend Snippet: Simulated electrical characteristics of MoTe 2 -based photodetectors with and without CdSe/ZnS QDs when exposed to 520 nm illumination. ( a ) The output curve of the MoTe 2 -based photodetector without QDs shows its response to dark conditions and power density from 11.3 to 171.3 mW/cm 2 at a 520 nm wavelength. ( b ) Output curves of the MoTe 2 -based photodetector with QDs under dark conditions and illumination power densities from 11.3 mW/cm 2 to 171.3 mW/cm 2 at a 520 nm wavelength. ( c ) Transfer curves of the MoTe 2 -based photodetector without QDs under dark and an illuminated power density of 171.3 mW/cm 2 at 520 nm (V d = 1 V). ( d ) Transfer curves of the MoTe 2 -based photodetector with QDs under dark and an illuminated power density of 171.3 mW/cm 2 at 520 nm (V d = 1 V).

Techniques Used:

( a ) Energy band diagram of the CdSe/ZnS/MoTe 2 -based photodetector , The blue lines in the figure represent the edge positions of MoS 2 , and the orange lines represent the edge positions of QDs. ( b ) Schematic of the complete device.
Figure Legend Snippet: ( a ) Energy band diagram of the CdSe/ZnS/MoTe 2 -based photodetector , The blue lines in the figure represent the edge positions of MoS 2 , and the orange lines represent the edge positions of QDs. ( b ) Schematic of the complete device.

Techniques Used:

Simulated photoresponses of MoTe 2 and CdSe/ZnS/MoTe 2 heterostructure-based devices. ( a ) Time-dependent photoresponses of MoTe 2 and CdSe/ZnS/MoTe 2 under V d = +1 V and V g = 0 V, under 520 nm light illumination using an optical power density of 171.3 mW/cm 2 . ( b ) Time-dependent photoresponses of MoTe 2 and CdSe/ZnS/MoTe 2 at V d = +1 V and V g = 0 V, under 630 nm light illumination using the same power density. ( c , d ) Rise and decay times with QDs at 520 nm and 630 nm, the dashed line in the figure is used to determine the rise and decay time.
Figure Legend Snippet: Simulated photoresponses of MoTe 2 and CdSe/ZnS/MoTe 2 heterostructure-based devices. ( a ) Time-dependent photoresponses of MoTe 2 and CdSe/ZnS/MoTe 2 under V d = +1 V and V g = 0 V, under 520 nm light illumination using an optical power density of 171.3 mW/cm 2 . ( b ) Time-dependent photoresponses of MoTe 2 and CdSe/ZnS/MoTe 2 at V d = +1 V and V g = 0 V, under 630 nm light illumination using the same power density. ( c , d ) Rise and decay times with QDs at 520 nm and 630 nm, the dashed line in the figure is used to determine the rise and decay time.

Techniques Used:



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The COMSOL Multiphysics simulation output of the optical and electronic properties of the SiO 2 /MoTe 2 <t>/CdSe/ZnS</t> heterostructure. ( a – c ) The absorption spectrum of MoTe 2 , SiO 2 , and CdSe/ZnS QDs. ( d ) The multilayer geometry visualized using a COMSOL-based simulation. ( e ) Absorption, ( f ) transmission, and ( g ) reflection spectra of the complete SiO 2 /MoTe 2 /CdSe/ZnS. ( h ) Energy band diagram of the heterostructure that shows the alignment of type-I bands between the layers of MoTe 2 and CdSe/ZnS and provides the possibility of carrier confinement and separation of charges. From left to right, the energy band diagram corresponds to SiO 2 MoTe 2 /CdSe/ZnS. SiO 2 acts as the insulating substrate, MoTe 2 is the active layer, and CdSe/ZnS represents the core–shell quantum dots.
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Image Search Results


Journal: RSC Advances

Article Title: Toward sustainable diagnostics for Candida albicans : the role of artificial intelligence in analytical chemistry from data processing to Python-based blueness and redness evaluation metrics

doi: 10.1039/d6ra00286b

Figure Lengend Snippet: Analytical methods for detection of candida albicans

Article Snippet: 2. Bioconjugate concanavalin A to CdTe-MSA QDs with specific labeling of on hyphae and yeast C. albicans cells. , 2. Labeling with QDs-(Con A) conjugated to antibodies with high-resolution labeling of biofilms both in vitro and in vivo . , 2. Conjugation: QDs : Con A ratio 1000 : 1, pH 8.0, 2 h incubation at room temperature with gentle stirring. , 2. UV-vis Absorption spectroscopy: spectrophotometer (thermo scientific)..

Techniques: Labeling, Fluorescence, Spectroscopy, Cell Culture, Suspension, Circular Dichroism, Confocal Microscopy, Flow Cytometry, In Vitro, In Vivo, Conjugation Assay, Incubation, Gentle, Spectrophotometry, Concentration Assay, Isolation, Raman Spectroscopy, Metabolic Labelling, Bacteria, Diagnostic Assay, Colorimetric Assay, Binding Assay, Sample Prep, Software, Biomarker Discovery, Infection, In Situ Hybridization, Sequencing, Microscopy, Hybridization, Transmission Assay, Enzyme-linked Immunosorbent Assay, Centrifugation, Nuclear Magnetic Resonance, Structural Proteomics, Derivative Assay, Selection, Electrophoresis, Red Blood Cell Lysis, Quantitation Assay, Mass Spectrometry, Gas Chromatography, Disruption, Produced, Impedance Spectroscopy, Activation Assay, Blocking Assay, Activity Assay, Construct, Förster Resonance Energy Transfer, Real-time Polymerase Chain Reaction, Saline, Clinical Proteomics, Membrane, Functional Assay

Journal: RSC Advances

Article Title: Carbon dots from contaminated Eichhornia crassipes roots for spectrally multiplexed identification and sensing of solvents

doi: 10.1039/d6ra00409a

Figure Lengend Snippet: Comparison of CDs from different waste precursors (pollutant and non-pollutant) used for the detection of ethanol, methanol and acetone

Article Snippet: ZnS : Mn 2+ quantum dot (QDs) and soluble N -methylpolypyrrole (NMPPy) hybrid , Methanol in water and ethanol , 0.004 , 0.1–0.9 , — , 1 (∼422 nm) , — , .

Techniques: Comparison, Solvent, Concentration Assay

The COMSOL Multiphysics simulation output of the optical and electronic properties of the SiO 2 /MoTe 2 /CdSe/ZnS heterostructure. ( a – c ) The absorption spectrum of MoTe 2 , SiO 2 , and CdSe/ZnS QDs. ( d ) The multilayer geometry visualized using a COMSOL-based simulation. ( e ) Absorption, ( f ) transmission, and ( g ) reflection spectra of the complete SiO 2 /MoTe 2 /CdSe/ZnS. ( h ) Energy band diagram of the heterostructure that shows the alignment of type-I bands between the layers of MoTe 2 and CdSe/ZnS and provides the possibility of carrier confinement and separation of charges. From left to right, the energy band diagram corresponds to SiO 2 MoTe 2 /CdSe/ZnS. SiO 2 acts as the insulating substrate, MoTe 2 is the active layer, and CdSe/ZnS represents the core–shell quantum dots.

Journal: Sensors (Basel, Switzerland)

Article Title: Multiscale Design and Simulation of CdSe/ZnS/MoTe 2 Hybrid Photodetectors

doi: 10.3390/s26082516

Figure Lengend Snippet: The COMSOL Multiphysics simulation output of the optical and electronic properties of the SiO 2 /MoTe 2 /CdSe/ZnS heterostructure. ( a – c ) The absorption spectrum of MoTe 2 , SiO 2 , and CdSe/ZnS QDs. ( d ) The multilayer geometry visualized using a COMSOL-based simulation. ( e ) Absorption, ( f ) transmission, and ( g ) reflection spectra of the complete SiO 2 /MoTe 2 /CdSe/ZnS. ( h ) Energy band diagram of the heterostructure that shows the alignment of type-I bands between the layers of MoTe 2 and CdSe/ZnS and provides the possibility of carrier confinement and separation of charges. From left to right, the energy band diagram corresponds to SiO 2 MoTe 2 /CdSe/ZnS. SiO 2 acts as the insulating substrate, MoTe 2 is the active layer, and CdSe/ZnS represents the core–shell quantum dots.

Article Snippet: In this work, we report a detailed theoretical study of a CdSe/ZnS QDs-sensitized MoTe 2 photodetector by combining optical simulations, density functional theory (DFT) calculations, and Silvaco technology computer-aided design (TCAD) device modeling.

Techniques: Transmission Assay

Simulated electrical characteristics of MoTe 2 -based photodetectors with and without CdSe/ZnS QDs when exposed to 520 nm illumination. ( a ) The output curve of the MoTe 2 -based photodetector without QDs shows its response to dark conditions and power density from 11.3 to 171.3 mW/cm 2 at a 520 nm wavelength. ( b ) Output curves of the MoTe 2 -based photodetector with QDs under dark conditions and illumination power densities from 11.3 mW/cm 2 to 171.3 mW/cm 2 at a 520 nm wavelength. ( c ) Transfer curves of the MoTe 2 -based photodetector without QDs under dark and an illuminated power density of 171.3 mW/cm 2 at 520 nm (V d = 1 V). ( d ) Transfer curves of the MoTe 2 -based photodetector with QDs under dark and an illuminated power density of 171.3 mW/cm 2 at 520 nm (V d = 1 V).

Journal: Sensors (Basel, Switzerland)

Article Title: Multiscale Design and Simulation of CdSe/ZnS/MoTe 2 Hybrid Photodetectors

doi: 10.3390/s26082516

Figure Lengend Snippet: Simulated electrical characteristics of MoTe 2 -based photodetectors with and without CdSe/ZnS QDs when exposed to 520 nm illumination. ( a ) The output curve of the MoTe 2 -based photodetector without QDs shows its response to dark conditions and power density from 11.3 to 171.3 mW/cm 2 at a 520 nm wavelength. ( b ) Output curves of the MoTe 2 -based photodetector with QDs under dark conditions and illumination power densities from 11.3 mW/cm 2 to 171.3 mW/cm 2 at a 520 nm wavelength. ( c ) Transfer curves of the MoTe 2 -based photodetector without QDs under dark and an illuminated power density of 171.3 mW/cm 2 at 520 nm (V d = 1 V). ( d ) Transfer curves of the MoTe 2 -based photodetector with QDs under dark and an illuminated power density of 171.3 mW/cm 2 at 520 nm (V d = 1 V).

Article Snippet: In this work, we report a detailed theoretical study of a CdSe/ZnS QDs-sensitized MoTe 2 photodetector by combining optical simulations, density functional theory (DFT) calculations, and Silvaco technology computer-aided design (TCAD) device modeling.

Techniques:

( a ) Energy band diagram of the CdSe/ZnS/MoTe 2 -based photodetector , The blue lines in the figure represent the edge positions of MoS 2 , and the orange lines represent the edge positions of QDs. ( b ) Schematic of the complete device.

Journal: Sensors (Basel, Switzerland)

Article Title: Multiscale Design and Simulation of CdSe/ZnS/MoTe 2 Hybrid Photodetectors

doi: 10.3390/s26082516

Figure Lengend Snippet: ( a ) Energy band diagram of the CdSe/ZnS/MoTe 2 -based photodetector , The blue lines in the figure represent the edge positions of MoS 2 , and the orange lines represent the edge positions of QDs. ( b ) Schematic of the complete device.

Article Snippet: In this work, we report a detailed theoretical study of a CdSe/ZnS QDs-sensitized MoTe 2 photodetector by combining optical simulations, density functional theory (DFT) calculations, and Silvaco technology computer-aided design (TCAD) device modeling.

Techniques:

Simulated photoresponses of MoTe 2 and CdSe/ZnS/MoTe 2 heterostructure-based devices. ( a ) Time-dependent photoresponses of MoTe 2 and CdSe/ZnS/MoTe 2 under V d = +1 V and V g = 0 V, under 520 nm light illumination using an optical power density of 171.3 mW/cm 2 . ( b ) Time-dependent photoresponses of MoTe 2 and CdSe/ZnS/MoTe 2 at V d = +1 V and V g = 0 V, under 630 nm light illumination using the same power density. ( c , d ) Rise and decay times with QDs at 520 nm and 630 nm, the dashed line in the figure is used to determine the rise and decay time.

Journal: Sensors (Basel, Switzerland)

Article Title: Multiscale Design and Simulation of CdSe/ZnS/MoTe 2 Hybrid Photodetectors

doi: 10.3390/s26082516

Figure Lengend Snippet: Simulated photoresponses of MoTe 2 and CdSe/ZnS/MoTe 2 heterostructure-based devices. ( a ) Time-dependent photoresponses of MoTe 2 and CdSe/ZnS/MoTe 2 under V d = +1 V and V g = 0 V, under 520 nm light illumination using an optical power density of 171.3 mW/cm 2 . ( b ) Time-dependent photoresponses of MoTe 2 and CdSe/ZnS/MoTe 2 at V d = +1 V and V g = 0 V, under 630 nm light illumination using the same power density. ( c , d ) Rise and decay times with QDs at 520 nm and 630 nm, the dashed line in the figure is used to determine the rise and decay time.

Article Snippet: In this work, we report a detailed theoretical study of a CdSe/ZnS QDs-sensitized MoTe 2 photodetector by combining optical simulations, density functional theory (DFT) calculations, and Silvaco technology computer-aided design (TCAD) device modeling.

Techniques: